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ARCHIVE INFORMATION
MRF6P3300HR3 MRF6P3300HR5
13
RF Device Data
Freescale Semiconductor
TYPICAL TWO-TONE BROADBAND CHARACTERISTICS
Figure 22. Two-T one Power Gain versus
Output Power @ 473 MHz
21
24.5
5
IDQ
= 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
24
23
22
100 400
G
ps
, POWER GAIN (dB)
1600 mA
23.5
22.5
21.5
10
1200 mA
800 mA
Figure 23. Two-T one Power Gain versus
Output Power @ 560 MHz
20
23.5
5
IDQ
= 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
23
22
21
100 400
G
ps
, POWER GAIN (dB)
1600 mA
22.5
21.5
20.5
10
1200 mA
800 mA
Figure 24. Two-T one Power Gain versus
Output Power @ 660 MHz
18.5
21
5
IDQ
= 2400 mA
20.5
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
19
100 400
G
ps
, POWER GAIN (dB)
1600 mA
20
19.5
10
1200 mA
800 mA
Figure 25. Two-T one Power Gain versus
Output Power @ 760 MHz
16.5
19
5
IDQ
= 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
18.5
17
100 400
G
ps
, POWER GAIN (dB)
1600 mA
18
17.5
10
1200 mA
800 mA
VDD
= 32 Vdc
f1 = 757 MHz, f2 = 763 MHz
Two-Tone Measurements
6 MHz Tone Spacing
VDD
= 32 Vdc, f1 = 657 MHz, f2 = 663 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
Figure 26. Two-T one Power Gain versus
Output Power @ 857 MHz
17.5
20
5
IDQ
= 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
19.5
18
100 400
G
ps
, POWER GAIN (dB)
1600 mA
19
18.5
10
1200 mA
800 mA
VDD
= 32 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
VDD
= 32 Vdc, f1 = 470 MHz, f2 = 476 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
VDD
= 32 Vdc, f1 = 557 MHz, f2 = 563 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
相关PDF资料
MRF6P9220HR5 MOSFET RF N-CH 28V 47W NI-860C3
MRF6S18060NBR1 MOSFET RF N-CH 26V 60W TO272-4
MRF6S18100NR1 MOSFET RF N-CH 28V 100W TO2704
MRF6S18140HSR5 MOSFET RF N-CH 28V ESD NI880S
MRF6S19060GNR1 MOSFET RF N-CH 28V TO-270-2 GW
MRF6S19100GNR1 MOSFET RF N-CH 28V TO-270-2 GW
MRF6S19100HSR5 MOSFET RF N-CHAN 28V 22W NI-780S
MRF6S19120HSR5 MOSFET RF N-CHAN 28V 19W NI-780S
相关代理商/技术参数
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MRF6P9220HR3_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P9220HR3_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P9220HR5 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
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